Negative differential resistance of InGaAs dual channel transistors
نویسندگان
چکیده
منابع مشابه
Negative differential resistance of InGaAs dual channel transistors
We demonstrate a new type of velocity modulation transistor (VMT) with an InGaAs dual channel structure fabricated on an InP (001) substrate. The dual channel structure consists of a high mobility 10 nm In0.53Ga0.47As quantum well, a 2 nm In0.52Al0.48As barrier layer, and a low mobility 1 nm In0.26Ga0.74As quantum well. The VMTs have a negative differential resistance (NDR) effect with a low so...
متن کاملSteep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance ...
متن کاملTunable Negative Differential Resistance controlled by Spin Blockade in Single Electron Transistors
We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements performed as a function of applied source-drain bias, electron number, and magne...
متن کاملImproving the Breakdown Voltage, ON–resistance and Gate–charge of InGaAs LDMOS Power Transistors
Abstract. Recently, a lateral double diffused metal-oxide-semiconductor (LDMOS) using In0.53Ga0.47As having an extended–p + (ep+) body has been shown to be better than a conventional silicon based LDMOS. In this paper, we show that using a stepped gate (SG) for the InGaAs LDMOS, a significantly improved performance can be achieved than using an extended–p+ body for the InGaAs LDMOS. The propose...
متن کاملInGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage
InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain channels, which substantially increase the channel concentration and decrease the drain-to-source sa...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2006
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/38/1/027